Abstract
Current-voltage characteristics of MOSFETs at T = 300 K and T = 77 K were investigated. Analysis and comparison of different methods of extraction MOSFET threshold voltage at room and cryogenic temperature was performed, carriers mobility and mobility attenuation factor were calculated. Operation of MOSFETs was simulated by PSPICE program at T = 300 K and T = 77 K, and comparison of the results of modeling with experimental results was performed. Extracted data allow to model basic elements of readouts at T = 77 K.
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