Abstract
With the technique of inverse current commutation with semiconductor devices (ICCOS) switch, an improved repetitive inductive pulsed power supply (IPPS) circuit topology was proposed in our previous studies. In order to analyze the influence of key circuit parameters on the main performance of the improved repetitive IPPS, calculations were carried out by using the calculation model established by the circuit state equations. The results show that with a high coupling coefficient $k$ , inductance ratio $n=L_{2}/(L_{2}+L_{\mathrm{L}})$ and capacitance $C$ , the maximum voltage of the main switch and the ratio of capacitive stored energy can be reduced, while the recovery rate of residual energy can be improved.
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