Abstract
Abstract Local laser doping (LLD) and laser fired-contacts (LFC) are among the most promising techniques based on laser tools to be industrially applied in high efficiency crystalline silicon (c-Si) solar cells production. Here we present a comprehensive parameterization of LLD and LFC processes using commercial ns laser sources. The best process conditions are assessed both analysing the morphology and the electrical characteristics of the irradiated test samples. Values for the normalized LFC resistance far below 1.0 mΩcm 2 have been obtained. For LLD experiments we found irradiation conditions giving excellent diode behaviour, with ideality factors below 1.5.
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