Abstract
Sc doped AlN (ScAlN) films with c-axis orientation have a very high acoustic velocity and other advantages which could be used for film bulk acoustic resonator (FBAR), surface acoustic wave (SAW) and other piezoelectric devices. In this paper, ScAlN films were prepared by reactive direct-current magnetron sputtering. The degree of preferential orientation (PO), the surface topography and cross-section views of ScAlN thin films grown on Si (100) substrates at various sputtering pressure, sputtering power and substrate temperature have been investigated by X-ray diffraction, atomic force microscopy and scan electron microscope respectively. Results show that the sputtering parameters have significant effects on the PO of ScAlN thin films. The optimum properties that the full width at half maximum (FWHM) of rocking curve of 1.8° and the RMS roughness of 1.811 nm were acquired with sputtering pressure of 0.45 Pa, sputtering power of 130 W, substrate temperature of 600 °C respectively.
Published Version
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