Abstract
A detailed parameter extraction procedure for a simple physics-based power silicon carbide (SiC) Schottky diode model is presented. The developed procedure includes the extraction of carrier concentration, active area, and thickness of the drift region, which are needed in the power Schottky diode model. The main advantage is that the developed procedure does not require any knowledge of device fabrication, which is usually not available to circuit designers. The only measurements required for the parameter extraction are simple static I-V characterization and C-V measurements. Furthermore, the physics-based SiC Schottky diode model whose parameters are extracted by the proposed procedure includes temperature dependences and is generally applicable to SiC Schottky diodes. The procedure is demonstrated for five Schottky diodes from two different manufacturers having the following ratings: 600 V/50 A, 1.2 kV/3 A, 1.2 kV/7 A, 1.2 kV/20 A, and 600 V/4 A.
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