Abstract
A method is presented to extract the bias-dependent series resistances and intrinsic conductance factor of individual MOS transistors from measured I-V characteristics. If applied to groups of scaled channel length devices, it also allows determination of the effective channel length together with the transversal field dependence of the carrier mobility. The method is exactly derived from conventional MOS theory based on the gradual channel approximation, and the deviations from such an ideal case are studied by means of two-dimensional device simulations. Experimental results obtained with n- and p-channel transistors of conventional as well as LDD type are presented to show the correctness of the proposed extraction procedure. >
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