Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Abstract

We target the parameter extraction from ${I}$ – ${V}$ and ${C}$ – ${V}$ characteristics and modeling of organic thin-film transistors (OTFTs) from 150 K up to 350 K (in two different manufacturing technologies). We also analyze the temperature dependence of the extracted parameters. For that purpose, we used a unified model and parameter extraction method at different temperatures adapted to OTFTs. We validated our model by comparison with experimental ${I}$ – ${V}$ characteristics in both the linear and saturation regimes and ${C}$ – ${V}$ characteristics at different frequencies.