Abstract
In this paper, the flicker noise properties of bottom-gate ESL structured amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) from two different technologies have been studied and modeled. Model development is carried out by adapting the Unified Model parameter Extraction Method (UMEM), developed for parameter extraction and compact modeling of TFT devices, and the unified 1/f noise model. Furthermore, comparative study of device figures of merits is performed to point out the device performance enhancements that the different fabrication technologies have brought about. It is found out that both devices have low deep state density, whereas the second device demonstrated higher performance in terms of carrier mobility and subthreshold slope. Both the DC and noise models are validated by matching them against experimental data obtained in different regimes of device operation.
Highlights
Amorphous InGaZnO thin-film transistors (a-IGZO TFTs) have drawn tremendous attention due to their higher carrier mobility, better bias stability, and large area uniformity of electrical properties
As amorphous InGaZnO (a-IGZO) TFTs continue to appear in varieties of structures, electrical characterization of the devices is currently an active area of research to help better understanding of the device physics
We showed that the physical origin of noise in the devices is carrier number fluctuation due to the exchange of carriers between the dielectric-oxide traps and the channel
Summary
Amorphous InGaZnO thin-film transistors (a-IGZO TFTs) have drawn tremendous attention due to their higher carrier mobility, better bias stability, and large area uniformity of electrical properties. 1 + λ(|VDS| − VDsat) are the gate width and channel length respectively, VT is the threshold voltage, Ci is the gate oxide capacitance density, Vaa and γa are extracted parameters that define the variation of the effective mobility with the applied gate voltage VGS. In the subthreshold regime (Fermi level is in the deep states) of operation of a-IGZO TFT devices (VGS < VT), the mobile charge carriers are less in number, and the drain current takes the form [9]
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