Parameter-dependent third-order susceptibility of InxGa1−x N/GaN parabolic quantum dots

Abstract

The electron states confined in wurtzite InxGa1−xN/GaN strained quantum dots (QDs) have been investigated in the effective-mass approximation by solving the Schrodinger equation, in which parabolic confined potential and strong built-in electric field effect (due to the piezoelectricity and spontaneous polarization) have been taken into account. The real part Reχ(3) (0,0,ω) and the imaginary part Im χ(3) (0,0,ω) of the third-order susceptibility deseribe quadratic electro-optic effects and electro-absorption process of the QDs respectively. And both of them have been calculated in directions parallel and vertical to z axis. Furthermore, the study shows Re χ(3) (0,0,ω) and Im χ(3) (0,0,ω) increase under resonant conditions with the QDs’ radius and height increase, and the same results occur when the content increase. In addition, the resonant position shift to the lower energy region when the parabolic frequencies increase.