Abstract
The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.
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