Abstract
In this paper, a steady-state matrix analysis method is introduced to analyze the output characteristics of the class-E power amplifier used in a wireless power transfer (WPT) system, which takes the inductance resistance, on-resistance and leakage current of metal-oxide-semiconductor field effect transistor (MOSFET) into account so that the results can be closer to the actual value. On this basis, the parameters of the class-E power amplifier are optimized, and the output power is improved under the premise of keeping the efficiency unchanged. Finally, the output characteristics of the amplifier before and after optimization are compared by an experiment, while the B-field strength around the WPT system is studied through simulation. The experimental results verify the correctness and feasibility of the optimization method based on steady-state matrix analysis.
Highlights
The Class-E power amplifier is widely used in high-frequency power supply, wireless power transfer (WPT) and other fields because of its simple structure and high output efficiency [1,2]
For further research on the B-field strength around the wireless power transfer system, we studied system with PCL-type after optimization (Case 4)
Compared with the analysis process of the working principle of a class-E power amplifier, non-ideal factors are considered in this method, such as inductance resistance and leakage current, etc
Summary
The Class-E power amplifier is widely used in high-frequency power supply, wireless power transfer (WPT) and other fields because of its simple structure and high output efficiency [1,2]. Conditions when the class-E power amplifier works under the ideal condition and the efficiency is 100% [4]. The relationship between the DC power supply of a class-E power amplifier and MOSFET’s peaks voltage is studied in [6]. The effect of various parameters of a class-E power amplifier on the output characteristics of the circuit, the voltage and the current waveform of the MOSFET are analyzed in [7]. Mury and his team conducted an in-depth study on the operating characteristics of class-E power amplifiers in the sub-optimal working state where the duty cycle of the MOSFET is not
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