Abstract
Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrically detected magnetic resonance (EDMR) results on InGaN/AlGaN double heterostructures which have an intense blue emission. The dominant feature detected by either technique is a broad resonance (ΔB∼21 mT) at g≊2.00. Our ELDMR measurements show that this is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our results we propose a model for the blue emission from these diodes.
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