Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si

B Majhi,T Das,C Mahata,M K Bera,M.K Hota,S Mallik,C K Maiti

doi:10.1109/ipfa.2009.5232718

Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si

B Majhi, T Das + Show 5 more

https://doi.org/10.1109/ipfa.2009.5232718

Copy DOI

Publication Date: Jul 1, 2009

Citations: 3

Affiliation: Indian Institute of Technology Kharagpur, Tokyo Institute of Technology

#Results Of Electron Paramagnetic Resonance #Internal Photoemission + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

Charge trapping kinetics and chemical nature of defects present in Al/TaYO x /strained-Si/Si 0.8 Ge 0.2 MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.

Full Text