Abstract
On the basis of electron spin resonance (ESR) measurements, we observed a unique paramagnetic center (Tb center, g=2.003) in porous low-dielectric-constant (low-k) carbon-doped silicon oxide (SiOCH) film after annealing the film in vacuum. Fourier transform infrared spectroscopy (FT-IR) spectra indicated that the number of Si–CH3 bonds in the SiOCH film decreased with increased Tb-center absorbance. Molecular calculations indicate that this paramagnetic center differs from an E' center and has a microstructure with carbon atoms in its backbond. A Tb center was also observed after annealing using ultraviolet (UV) light or an electron beam (EB), which both increase film leakage current.
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