Abstract
We studied in detail the paramagnetic defect generated in the porous low- SiOCH films, which is called the center with the oxygen–carbon mixed back bonds. We baked the SiOCH films in vacuum from 600 to , which could correspond to temperature elevation at a local area in cases of UV or electron-beam curing and Joule heating in circuits. The amount of the center increased abruptly around by electron spin resonance spectroscopy, at which we observed 30% volume shrinkage by ellipsometry and network change from a cage link to a ring link by Fourier transform IR spectroscopy. These phenomena might be due to the crush of microholes wrapping end groups. Therefore, we consider that the generation of the center suggests the quality change of the porous low- SiOCH films for the ultralarge-scale integration reliability.
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