Parallel stress and perpendicular strain depth distributions in [001] silicon amorphized by ion implantation

Abstract

Measurements performed by x-ray diffraction techniques on silicon wafers implanted with silicon ions show that surface amorphous film and underlying interstitial defects are able to induce wafer convexity. The simulation of the rocking curves obtained by double-crystal diffraction before and after annealing, the measurement of the total vertical expansion of the implanted layer, the determination of the curvature radius, and the use of a theoretical model, directly compatible with the output of rocking curve simulation, recently developed for multilayered crystalline structures, allow us to determine the tangential stress depth distribution of the implanted wafer and the average relaxed volume expansion of the amorphous layer. The results obtained show that both stress and volume expansion increase with dose for a given ion-beam energy. A comparison is made with similar data reported recently in the literature for high-dose arsenic-implanted silicon.