Abstract
The potential advantages of high-barrier quantum well structures for p-channel field-effect transistors are investigated in measurements of parallel and perpendicular hole transport in high AlAs mole fraction heterostructures. The hole mobility in GaAs and (In,Ga)As quantum wells confined by (Al,Ga)As barriers and current-voltage characteristics of metal-(Al,Ga)As/GaAs diodes are examined in structures with AlAs mole fractions as high as 0.85. Hole mobilities of nearly 5000 cm2/V s with a density of 1.0×1012 cm−2 are obtained at 77 K and reductions in perpendicular currents by several orders-of-magnitude are obtained at 300 and 77 K.
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