Parallel and interleaved structures for diamond Schottky diodes

Abstract

In the recent years, diamond Schottky diodes with high Figures of Merit have been demonstrated. Static and dynamic characteristics of diamond Schottky diodes are presented in this paper. The diamond substrate is associated with silicon MOSFETs in a power switching cell, showing promising switching characteristics. However, even if these diodes show a high current density, the effective total current is limited by the small size of diamond diodes and substrate. To overcome this problem, one has to consider an association of such semiconductors to design power converters with high current ratings. Two converters integrating diamond Schottky diodes and silicon MOSFETs are presented here to understand the interactions of diodes inside the diamond substrate. This work can be used to determine the solutions to take advantage of this diamond semiconductor and to design full diamond converters in a coming future.