Abstract
For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most important parameter of the diodes, the minority carrier lifetime, is measured by different techniques. A qualitative analysis and a computer simulation have been carried out to clarify the origin of these contradictions. For 4H-SiC p/sup +/n diodes with 6 kV blocking capability, data on residual voltage drop at high current densities, switch-on time, reverse current recovery, and post-injection voltage decay are analyzed. It is shown that the whole set of experimental data can be explained by the existence of a thin (l/spl sim/0.1 /spl mu/m) layer near the metallurgical boundary of the p/sup +/n junction with very small carrier lifetime /spl tau//sub l/ that is essentially smaller than the carrier lifetime /spl tau/ across the remaining part of the 50-/spl mu/m n-base. It is emphasized that the existence of such a layer allows, under certain conditions, the combination of a relatively low residual forward voltage drop and very fast reverse recovery. Approaches to minority carrier lifetime measurements are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.