Abstract
AbstractA 4‐thin‐film transistor (TFT) voltage‐programmed pixel circuit is fabricated using low‐temperature (170°C) hydrogenated amorphous silicon (a‐Si:H) TFTs process on flexible polyethylene naphthalate substrate. The electrical stability of the 4‐TFT circuit was characterized under mechanical strain and flat (unstrained) conditions. The compensated drive current degraded approximately 5% under electrical bias and tensile strain. This result was similar to pixel circuits fabricated at high temperature (300°C) on rigid glass substrates.
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