Abstract
AbstractA transparent and conductive electrode based on hydrogen (H) doped ZnO has been proposed for active‐matrix (AM) display applications. With optimal H plasma power and treat time, the resultant ZnO:H exhibits a low sheet resistance of 200 ohm/sq at a thickness of 150 nm. The demonstrated transparent and conductive ZnO:H can serve as electrode for LCD or OLED as well as S/D electrode for ZnO TFT. With proposed ZnO:H electrode, two photomask steps can be reduced in the fabrication of ZnO TFT‐based AM backplanes.
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