Abstract
AbstractExcimer lasing, which can reduce InGaZnO4 (IGZO) resistance, makes it possible to form source and drain regions in IGZO thin‐film transistors (TFTs). Self‐aligned bottom‐gate IGZO‐TFTs can be fabricated by back‐side excimer laser irradiation, using a gate electrode as a mask. We have investigated the dependence on laser energy density of the TFT characteristics and IGZO performance. These results indicate that this method offers a wide process margin and is compatible with large‐area processing.
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