Abstract
In this paper, two types of 4.0 μm back side illuminated stacked voltage mode global shutter pixels implemented in a prototype CMOS image sensor are reported. One is a pixel with a lateral overflow integration capacitor (LOFIC) to expand the sensor dynamic range and the other is a pixel having dual photodiodes and dual conversion gains which enables the phase detection auto focus capability with single exposure high dynamic range (SEHDR). Thanks to the LOFIC and the dual conversion gain technologies, SEHDR of 90 dB and 77 dB has been achieved in the global shutter mode.
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