Abstract
Scanning electron microscopy panchromatic cathodoluminescence has been used to investigate extended crystal defects in (111) CdTe bulk crystals and homoepitaxial layers grown by liquid phase epitaxy. Good defect images have been obtained by a very simple experimental setup using a Si photodiode at room temperature. The bulk crystals have been found to be affected by dislocations arranged in cellular structures, lineages roughly parallel to the [110] directions, [110] slip bands, and precipitates. The homoepitaxial layers exhibited dislocations, precipitates, and inclusions of growth solution. The wavy morphology typical of the layers grown by liquid phase epitaxy did not give rise to cathodoluminescence contrast.
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