Abstract
This paper presents, Palladium-based Trench Gate MOSFET (TG-MOSFET) for the detection of hydrogen gas. The sensing mechanism occurs with the dissociation of hydrogen molecules into hydrogen atom and then diffuses into the palladium gate. Thereafter, owing to the polarization of the hydrogen atom, the dipole layer is formed at the palladium-oxide (SiO2) interface. From the perspective of a highly sensitive gas sensor, it is observed that the proposed device has very high sensitivity (105 A/A) for different gas pressure applying onto the device. Further, the gate bias dependent sensitivity of the device has been analyzed in terms of change in threshold voltage (ΔVth), surface potential, energy band, and transconductance for the entire range of gas pressure. Furthermore, the device stability is presented and the impact of temperature has also been investigated on the sensing performance of the device. Result reveals that the proposed device is highly sensitive for the detection of hydrogen gas.
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