Abstract
Cobalt in silicon dissolves mainly interstitially. For shallow acceptor concentrations larger than 1016 atoms cm-3 the formation of pairs of interstitial cobalt and negatively charged boron, aluminium and gallium acceptors is observed by Möβbauer spectroscopy. The cobalt acceptors pairs anneal out between 100 °C and 250 °C. The dissociation of the pairs and the precipitation of isolated interstitial cobalt occur simultaneously. The binding energies for the cobalt aluminium and cobalt gallium pairs are higher than for the cobalt boron pair. The Möβbauer spectra of the cobalt acceptor pairs are fitted by two or three doublets whose relative intensity varies with temperature. A tentative microscopic model is proposed. The existence of pairs with shallow acceptors implies that interstitial cobalt possesses a donor level.
Published Version
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