Abstract
The ability to predict material removal rates in chemical mechanical planarization (CMP) is an essential ingredient for low cost, high quality IC chips. Recently, models that address the slurry particles have been proposed. We address three such models. The first two differ only in how the number of active particles is computed. Both assume that pad asperities are identical and nonrandom. The third is dynamic in accommodating changing pad properties. For larger mean particle size (diameter), the role of the standard deviation of particle size distribution is uncertain. The dynamic behavior of the third model is compared with experimental observations.
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