Abstract
This letter presents research on a packaging-test-fixture for 8-10 GHz GaAs monolithic microwave integrated circuit-based in-line coupling radio frequency (RF) microelectromechanical systems (MEMS) power sensors by showing the performance of the power sensors embedded into RF circuit systems. The principle of the sensors is to measure a certain percentage of the microwave power coupled into a MEMS membrane. The packaging method utilizes the transition of the coplanar waveguide (CPW)-port power sensor, two microstrip lines, and two sub-miniature-A connectors. Experiments demonstrate that the design of the packaged power sensor has resulted in the reflection loss of about -25 dB at 9 GHz, with an insertion loss of less than 1.3 dB at 8-10 GHz, with good linearity of the output response. A sensitivity of more than 18.7 μ.V·mW <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> is obtained at 9 GHz at ambient temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
