Abstract
This paper addresses interconnect and passivation issues associated with the fabrication of high-voltage power electronic modules. A wire-bondless direct solder attachment hierarchy for interconnection was evaluated using two direct-bond copper (DBC) elements: one acting as a substrate connected to a base plate and the second as an interconnection lead-frame between the power semiconductor devices. Finite element modeling revealed their enhanced performance over wire-bonded modules due to at least an order of magnitude decrease in parasitic inductance and the added benefit of enhanced thermal performance. A two-step passivation/encapsulation method to provide higher breakdown voltages at high temperatures is proposed for future high-voltage power electronic modules.
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