Abstract
Barrier films for packaging applications are deposited by plasma enhanced chemical vapor deposition (PECVD) on PET film using a new, high density plasma source. The new source, termed the Penning Discharge Plasma source, implements a novel magnetic field/electrode configuration that confines the electron Hall current in an endless loop adjacent to the substrate. By confining the Hall current, a dense, uniform plasma is created and sustained over wide substrates. The result is high rate deposition at low substrate temperatures. The water vapor permeation of SiO 2 barrier films is reported as well as deposition rate, coating thickness and other film properties.
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