Abstract
This paper presents the design methodology, the realization and the power characteristics of plastic low cost packaged dual Power Transmitter (PT) operating in the 27–32 GHz band. Both millimetre-wave power transmitters are based on High Power Amplifier and SPDT Switch, they are fabricated on 150-nm Gallium Nitride HEMT on Silicon Carbide technology (AlGaN/GaN on SiC) from UMS. The main aim of this realization was the high integration of several power functions on the same package achieving a high Output Power, a high power Added Efficiency and a high isolation level between the two RF output paths addressing two pair of antennas. The measured power results under Continuous Wave (CW) signal of the dual PT demonstrate a maximum output power for each transmitter (POUT) higher than 4 W (36dBm) with 20 %Power Added Efficiency (P AE), 24 dB of insertion gain (GI) and 34 dB isolation between the two activated RF paths in the 27–32 GHz bandwidth.
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