Abstract
The γ-γ angular correlation technique (PAC) was employed to study the activation process of the shallow donor Se in GaAs. Therefore the PAC probe 73Se was implanted in the GaAs lattice with energies of 60 and ∼ 150 keV. The environment of the shallow donor Se was observed in dependence of several implant doses and rapid thermal annealing (RTA) temperatures. The results are discussed in comparison with Hall-effect measurements. Evidence is found that the donor-defect complexes, remaining after the activation process, are mainly acceptors compensating the shallow donor Se. However, after annealing above 980 ° C they show neutral behaviour.
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