Abstract
AbstractTheoretical simulations of spatial distribution of charge carriers and recombination rate, and I‐V characteristics of the bilayer organic light emitting diodes are carried out. Drift‐diffusion current transport, field‐dependent carrier mobility, exponential trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data indicating the validity of the physical models for organic light emitting diodes.
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