Abstract
AbstractNickel induced crystallization of a‐Si with a self‐release inducing source was studied. Three main factors affecting the crystallization rate were investigated. The new source possesses an effect of nickel self‐release and the crystallized poly‐Si has obviously lower nickel residua. The p‐channel thin film transistors (TFTs) based on the SR‐NILC poly‐Si film showed lower off‐state current (Ioff) and gate induced drain leakage (GIDL).
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