Year-end Sale % OFF 
Abstract
AbstractLeakage current characteristics of dual‐gate poly‐Si TFT's with intermediate lightly doped region (LDR) are investigated. When the length of LDR is 2μm and LDR implant dose is 2×1013/cm2, the leakage current of the proposed poly‐Si TFT is significantly reduced and the maximum ON/OFF current ratio is obtained.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
