Abstract
Ce3+, P5+, Ca2+, and Zn2+ ion doped Gd2SiO5 crystals are grown by the Czochralski method. The pulsed cathodoluminescence spectra, light yield, and scintillation time under gamma excitation are studied. It is first shown that additional doping with P5+ phosphorus ions decreases crystal cracking in the fabrication of scintillation elements, and increases the scintillation light yield in comparison with commercial Gd2SiO5:Ce3+ crystals.
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