Abstract
AbstractThe etched features of the thin Chromium (Cr) films deposited on SiO2‐Si substrate were investigated as a function of substrate temperature during rf‐sputtering deposition. In this work, the changes of both the grain structures and crystallographic orientations of sputtered Cr‐films as a function of substrate temperature were examined by Scanning Electron Microscopy (SEM) and X‐Ray Diffraction (XRD) measurement. In these measurements, we found that the tapering angle (θt) of thin Cr‐film after reactive ion etching depends on the deposition condition, especially, substrate temperature during rf‐sputtering process. Based on the obtained results, we fabricated the two kinds of Cr‐gated Mo‐tip field emitter arrays (FEAs): one is a FEAs with tapered gate electrode (tapering gated FEAs, θt ≤ 90°) and the other is a FEAs with tapering‐free gate electrode (non‐tapering gated FEAs, θt = 90°), compared the electron emission characteristics for this two kinds of FEAs.
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