Abstract
We have developed an ion transport model to simulate various degradation mechanisms in an amorphous InGaZnO (IGZO) thin film transistor (TFT). The simulation model reproduces the published data very well and demonstrates the evolution of charged ions in negative bias illumination stress, from which we can predict the ion contribution to the threshold voltage shift.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
