Abstract
Electrochemical migration (ECM) in silver (Ag) mesh transparent conductive films (TCFs) was evaluated by thermal humidity bias (THB) and water drop (WD) tests, showing color change and dendrites formation at the unprotected electrode gaps. Flexible barrier layer deposited by low temperature inductively coupled plasma enhanced chemical vapor deposition (IC‐PECVD) process was applied to prevent Ag mesh TCFs from ECM. The barrier layer structure was organosilicon/SiOx pairs deposited with the mixture of HMDSO, O2 and Ar at different ratios in the same PECVD chamber. The study indicated that the ECM behavior of Ag mesh can be well suppressed by the barrier layer at water vapor transmission rate (WVTR) of 8.8×10‐3g/m2/day.
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