Abstract
Oxide-based resistive random access memories (RRAM) are based on a conductive filament of oxygen vacancies across the film. It is pointed out that the density of vacancies must be high in order to form a percolating path due to the highly localised nature of the vacancy defect orbital, which is much more localised than that given by local density formalism.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
