Abstract
We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters and pre-treatment of the Ir substrates by Ar+ bombardment in the texture of the AlN films is also investigated. X-ray diffraction (XRD), atomic force microscopy (AFM) and piezoelectric assessment through measurement of BAW devices demonstrate that exceptionally highly c-axis-oriented AlN with high piezoelectric response can be sputtered on Ir electrodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
