P1–16: Low operation voltage nanometer base length, sharp and uniform transfer mold field emitter arrays

Abstract

Low operation voltage nanometer-order base length, extremely sharp and uniform field emitter arrays with 190 nm base length, 3.5 nm tip radius and 8 V/μm turn-on field at the short distance of less than 10 μm between anode and emitter, which is one of the lowest turn-on fields FEAs ever reported and is almost similar to the theoretical limit of 4.5 eV for the molybdenum work function value, have been developed by Transfer Mold method to realize the uniform field emission characteristics.