P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

Abstract

Herein, ZnO thin film transistors (TFTs) are fabricated on a flexible substrate with process temperature no more than 100 □. It is notable that the ZnO TFTs show preferable hysteresis and ouput characteristics with a field effect mobility (μFE) of 18 cm2V−1s−1 and an on‐to‐off curr ent ratio (Ion/Ioff) over 106. Our findings provide a novel route for fabrication of high‐performance flexible oxide TFTs.