Abstract
AbstractOxide TFT consisting of both channel layer (IGZO) and gate insulator (AlOx) grown by mist CVD which is one of suitable techniques for growing thin films continuously under atmosphere was fabricated. In the gate insulator, an AlOx thin film grown at 430°C exhibited the break down field (EBD) and the dielectric constant (k) of 5.9 MV/cm and 6.8, respectively. In the channel layer, each metal composition ratio of an IGZO thin film grown at 350°C was 16:37:47 (In:Ga:Zn). The field‐effect mobility (μlin) and on/off ratio of oxide TFT exhibit 4.2 cm2/(V · s) and >108, respectively. By this report, it can be said that the index of non‐vacuum process conversion of the TFT fabrication process was demonstrated.
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