Abstract
AbstractIn this paper, we propose a novel electrode structure, which exhibits high‐aperture ratio, in the super in‐plane switching (SIPS) liquid crystal (LC) cell for high transmittance. Generally, the transmittance of the S‐IPS LC cell is not superior to other LC mode using the multi domain effect because of the low aperture ratio. To improve the aperture ratio of the S‐IPS cell, we found the method to minimize the black matrix (BM) area by applying the novel electrode structure which can move the disclination from the active area. As a result, we found that the proposed electrode structure could provide higher aperture ratio than that of the conventional type by reducing the BM area, so that we could achieve the high transmittance compared to the conventional structure. We used the commercial software “TechWiz LCD” for calculation of the director configuration, which applies Q‐tensor method.
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