Abstract
AbstractWe have developed a noble high‐pressure annealing (HPA) method for solution‐processed indium gallium zinc oxide (IGZO) thin‐film transistors (TFTs). As the pressure increased, the electrical properties of solution‐processed IGZO TFTs were improved. This could be attributed to the decomposition promotion of metal‐organic bonding and the density decrease of interface defect states between IGZO channel and SiO2 gate insulator. For the IGZO channel layer annealed for 3 h at 1 MPa and 300 °C, its channel mobility (μFEFE), threshold voltage (Vth), subthreshold gate swing (S.S) and on/off ratio were 1.02 cm2/Vs, 2.47 V, 0.48 V/dec. and 7.5×106, respectively.
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