Abstract
A photoalignment technique used in preparation of fringe‐field‐switching (FFS) mode cells is presented. The azimuthal anchoring energy (AAE) of photoalignment is controllable by tuning the UV exposure condition and the value of AAE is as strong as that of the rubbing method. The electro‐optical properties of FFS cells are optimized with different electrode configurations and high quality dark states of various type of cells are achievedto provide the high contrast ratio. The great stability of voltage and thermal stress tests confirm that photoalignment is suitable for FFS/IPS applications.
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