P‐108: High conductivity transparent electrode with In2O3 – ZnO periodic structure and gradient oxygen concentration

Abstract

Multilayer structures based on the In‐Zn‐O (IZO) system with modulated oxygen doping have been developed as a TCF (transparent conductive film) alternative to ITO or IGZO layers in the LC and OLED displays. The minimum resistivity (3.37 Ohm*cm) and the maximum concentration of free charge carriers correspond to the layers synthesized in an atmosphere of pure argon, while the maximum mobility (39.18 cm2/V*s) corresponds to the layers synthesized in the atmosphere of both argon and oxygen 99.6%/0.4% mixture. Thin‐film periodic structures with gradient modulation of oxygen content in thickness have been fabricated by periodically changing the oxygen concentration in the composition of the working gas during spraying at a substrate temperature of 100 °C. The structures consist of alternating layers with a high concentration of free charge carriers and layers with high mobility. As a result of the single layers' thicknesses optimization the thin‐film periodic structures with a minimum resistivity of 2.89 Ohm*cm have been made. The resistivity is lower than in homogeneous layers of the same composition. The alternation of layers of optimal thickness provides high carrier mobility, it is inherent to layers synthesized in the atmosphere of 99.6/0.4 argon and oxygen mixture at high concentration. The mobility value is close to the value achieved in the layers synthesized in the pure argon atmosphere.This material provides fabrication of high quality, stable and low cost transparent electrodes or TFT layers with performances corresponding to parameters of traditional materials.