Abstract
Abstract The high exciton binding energy and band gap energy of ZnO thin films open the prospect of fabricating semiconductor lasers in the ultraviolet spectral range. A prerequisite for laser diode fabrication is highly p-doped ZnO which was not reproducibly obtained up to now. Without intentional doping ZnO exhibits n-type conduction. ZnO thin films have been obtained by radio-frequency assisted pulsed laser deposition. A metallic Zn target was used for ablation in an oxygen and nitrogen RF discharge. The electrical and morphological properties of the films grown on Si were studied by Atomic Force Microscopy (AFM), X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), optical absorption and Hall Effect measurements for different ratios between the nitrogen and oxygen content. The AFM images of the as-grown ZnO films reveal high quality surfaces with low values for the surface roughness and a sharp distribution of grains sizes as an effect of the RF discharge. The XRD patterns for all samples exhibit only (002) and (004) peaks indicating that the c -axis is always oriented normal to the substrate surface. The films present p-type conductivity with different carrier concentration and mobility depending on the nitrogen/oxygen ratio.
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