Abstract
AbstractZnO and ZnMnO doped with N and/or As layers were fabricated by thermal oxidation of ZnTe and ZnMnTe grown by MBE on different substrates. The Hall measurements demonstrated p ‐type conductivity with the hole concentration of ∼5 · 1019 cm–3 for ZnO:As and ZnO:As:N on GaAs substrates and ∼ 6 · 1017 cm–3 for ZnTe:N on ZnTe substrates. Optical study showed meaningful differences between samples with different acceptor, grown on different substrates. Magnetoptical experiment demonstration Zeeman splitting in ZnMnO samples. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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